General Information:

Assistant Professor: Nov 2021 – Present
Email: tmuneshwar[at]iitb.ac.in
Tel (Office): +91-22-25767640

Office: New CSE building, #205
Google Scholar Profile: https://scholar.google.co.in/citations?user=vryvM14AAAAJ

Academic Background:

  • Ph.D in Materials Engineering, Department of Chemical and Materials Engineering, University of Alberta, Canada, 2014
  • Dual Degree (B.Tech and M.Tech), Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, 2009

Positions held:

  • Post doctoral research fellow, Department of Chemical and Materials Engineering, University of Alberta, Canada, 2015 –? 2020
  • Research Associate, Department of Chemical and Materials Engineering, University of Alberta, Canada, 2020 –? 2021

Research Interests:

  • Materials for semiconductor logic/memory device applications
  • Modeling of vacuum thin film deposition processes
  • Atomic layer deposition (ALD) processes for oxides, nitrides and metal depositions
  • Atomic layer etching (ALE) of metals
  • Lab-to-Fab ALD/ALE process solutions

Selected Publications:

  • T. Muneshwar, K. Cadien, Stoichiometry controlled homogenous ternary oxide growth in showerhead atomic layer deposition reactor and application forZrxHf1-xO2, J. Vac. Sci. Technol. A. 39 (2021) 030401.
  • T. Muneshwar, K. Cadien, Resolving self-limiting growth in silicon nitride plasma enhanced atomic layer deposition with tris-dimethylamino silane precursor, J. Vac. Sci. Technol. A. 38 (2020) 062406.
  • T. Muneshwar, K. Caiden – Method to improve precursor utilization in pulsed atomic layer processes, US Patent 10,619,243, 2020.
  • T. Muneshwar, D. Barlage, K. Cadien, Homogeneous distribution of dopants in ALD films: Tin doped Zinc oxide (ZTO) case study, ALD/ALE 2019 conference, Bellevue, WA.
  • T. Muneshwar, D. Barlage, K. Cadien, Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization, J. Vac. Sci. Technol. A. 37 (2019) 030601.
  • T. Muneshwar, G. Shoute, D. Barlage and K. Cadien, "Parasitic Surface Reactions in High-Aspect Ratio Via Filling using ALD: A Stochastic Kinetic Model," 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 2018, pp. 40.2.1-40.2.4.
  • T. Muneshwar, K. Cadien, Surface Reaction Kinetics in atomic layer deposition: An analytical model and experiments, J. Appl. Phys. 124 (2018) 095302. (Editors Pick)
  • T. Muneshwar, G. Shoute, D. Barlage, K. Cadien, “Nucleation and Growth mode in ALD: an Atomistic Model”, ASD 2018 conference, Raleigh, NC. USA, 2018.
  • T. Muneshwar, K. Cadien, Comparing XPS on bare and capped ZrN films grown by plasma enhanced ALD: Effect of ambient oxidation, App. Surf. Sci. 435, (2018) 367-376.
  • T. Muneshwar, G. Shoute, D. Barlage, K. Cadien, Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition, J. Vac. Sci. Technol. A. 34 (2016) 050605.
  • T. Muneshwar, K. Cadien, AxBAxB… pulsed atomic layer deposition: Numerical growth model and experiments, J. Appl. Phys. 119 (2016) 085306. (Featured Article)
  • T. Muneshwar, K. Cadien, Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth, J. Vac. Sci. Technol. A. 33 (2015) 060603.
  • T. Muneshwar, K. Cadien, Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma, J. Vac. Sci. Technol. A. 33 (2015) 031502.
  • T. Muneshwar, K. Cadien, probing initial-stages of ALD growth with dynamic in-situ spectroscopic ellipsometry, App. Surf. Sci. 328, (2015) 344-348.