General information:

Assistant Professor: Nov 2023 – present

Tel: +91-22-2576-7603

Email: abhinandan.g[at]iitb.ac.in

Google Scholar Profile: https://scholar.google.co.in/citations?user=Da1AUZgAAAAJ&hl=en

Academic Background:

  • Ph.D. in Materials Science and Engineering, Arizona State University, Tempe, AZ, USA, 2015 – 2021
  • M.Tech in Metallurgical Engineering and Materials Science, IIT Bombay, India, 2011 – 2013
  • B.E. in Metallurgy & Materials, Indian Institute of Engineering Science and Technology, Shibpur, India, 2006 – 2010

Positions Held:

  • FIB-STEM Electron Microscopist, Lam Research Corporation, CA, USA. Oct 2021 – Sep 2023
  • Postdoctoral Research Scholar, Department of Physics, Arizona State University, USA. Feb 2021 – Jul 2021
  • Researcher, Tata Steel Ltd., Jamshedpur, India. Jul 2013 – Jul 2015

Research Interests:

  • Defects and interfaces in advanced functional materials
  • Transmission electron microscopy

Selected Publications:

  • “Extended defects in GaAs/GaAs1-xSbx/GaAs(001) heterostructures”, A Gangopadhyay, C Zhang, A Maros, N Faleev, RR King, C Honsberg, DJ Smith, Scripta Materialia, 225 (2023), 115150
  • “Atomic Structure of Extended Defects in GaAs-based Heterostructures” A Gangopadhyay, A Maros, N Faleev, RR King, DJ Smith.?Microscopy and Microanalysis. 25(S2):2022-2023 (2019)
  • “Self-assembled Bismuth Selenide (Bi2Se3) quantum dots grown by molecular beam epitaxy”, MS Claro, I Levy, A Gangopadhyay, DJ Smith, MC Tamargo, Scientific Reports, 9:3370 (2019)
  • “Atomic structure of dissociated 60° dislocations in GaAs/GaAs0.92Sb0.08/GaAs heterostructures”, A Gangopadhyay, A Maros, N Faleev, DJ Smith, Scripta Materialia, 153 (2018), 77-80